CPANTS

Physics-Etch 0.02 Latest

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Name	Abstract	Version	View
Physics::Etch	model wet and dry semiconductor etch processes	0.02	metacpan
Physics::Etch::Chamber	plasma-etch reactor geometry and derived conditions	0.02	metacpan
Physics::Etch::DryEtch	anisotropic plasma / RIE dry etch model	0.02	metacpan
Physics::Etch::Etchant	the chemistry used by an etch process	0.02	metacpan
Physics::Etch::GDSII	minimal GDSII stream reader / writer	0.02	metacpan
Physics::Etch::Layout	mask-pattern geometry for etch modelling	0.02	metacpan
Physics::Etch::Loading	macro / micro loading and ARDE (RIE-lag) models	0.02	metacpan
Physics::Etch::Material	a material (film, mask, or substrate) in an etch model	0.02	metacpan
Physics::Etch::Process	base class for wet and dry etch process models	0.02	metacpan
Physics::Etch::Simulation	pattern/chamber/loading-aware etch simulation	0.02	metacpan
Physics::Etch::WetEtch	isotropic, temperature-activated wet etch model	0.02	metacpan